NoMIS Power Partners in US-Led HVDC Initiative to Accelerate Advanced Grid Infrastructure Development
ALBANY, New York: NoMIS Power Corporation has joined a major US-backed research initiative focused on developing next-generation high-voltage direct current (HVDC) technologies aimed at strengthening future energy transmission systems and supporting growing electricity demand.
The company announced its participation as an industry partner in a three-year project under the US Department of Energy’s Advanced Research Projects Agency–Energy DC-GRIDS programme, which promotes disruptive converter technologies for resilient and sustainable power infrastructure.
The project, valued at approximately US$2.5 million, is led by Michigan State University under researcher Dr Omid Beik and centres on the development of advanced silicon carbide-based power converter submodules for multi-terminal HVDC systems.
According to project organisers, these systems are expected to become increasingly important for long-distance electricity transmission, offshore renewable energy integration, hyperscale data centre operations and cross-border grid interconnections.
As part of the collaboration, NoMIS Power Corporation will supply its 3.3 kilovolt silicon carbide MOSFET portfolio, including the company’s upcoming 25 milliohm device designed for high-efficiency HVDC applications.
The company stated that the low-resistance semiconductor device is expected to reduce power losses, improve thermal management and increase operational efficiency in large-scale energy systems.
The research consortium also includes several major industry and technology organisations such as National Renewable Energy Laboratory, GE Grid Solutions, Electric Power Research Institute and OPAL-RT Technologies.
The project will focus on developing Neutral Point Clamped Power Electronics Building Blocks (NPC-PEBBs), which are intended to function as modular and vendor-neutral building components for future HVDC converter platforms.
Compared with traditional silicon IGBT-based systems, the new SiC architecture is expected to offer higher voltage output, improved converter efficiency, reduced capacitor size and stronger fault current protection capabilities.
NoMIS Power Corporation will additionally oversee silicon carbide device packaging, electrical screening, testing and performance analysis throughout the project.
All related engineering activities will be conducted at the company’s research and development facility within the Albany Nanotech Complex in New York.
Chief executive officer Adam Morgan described multi-terminal HVDC technology as a key pillar in the future expansion of modern electricity infrastructure.
He said the company’s 3.3 kilovolt SiC platform was developed specifically to support demanding high-voltage applications linked to large-scale grid modernisation efforts.
The company also confirmed that its semiconductor technologies and power modules remain available for supply to other DC-GRIDS participants and global power electronics developers transitioning from conventional silicon-based systems.
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